Steep-slope Schottky diode with cold metal source

نویسندگان

چکیده

Today's circuit technology requires low-power transistors and diodes to extend Moore's law. While research has been focused on reducing power consumption of transistors, have not widely studied. Here, we report a low-power, thus steep-slope Schottky diode, with “cold metal” source. The barrier between metal electrode bulk MoS 2 enabled the diode behavior, IV curve originated from change in density states graphite (cold metal) source bias voltage. cold exhibits an ideality factor (η) < 1 for more than four decades drain current sizable rectifying ratio (10 8 ). realization paves way improvement technology.

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Operation regimes and electrical transport of steep slope Schottky Si-FinFETs

In the quest for energy efficient circuits, considerable focus has been given to steep slope and polarity-controllable devices, targeting low supply voltages and reduction of transistor count. The recently proposed concept of the three-independent gated (TIG) Si-FinFETs with Schottkybarrier (SB) has proven to bring both functionalities even in a single device. However, the

متن کامل

Schottky Diode Graphene Based Sensors

In this paper, we aim to demonstrate a novel scheme for integration of nanostructured semiconductor Graphene Oxide (GO) shottky diodes on flexible substrate for a wide range of sensing applications. The platform introduces a novel flexible GO/Pt/n-Si and GO/Pt/SiN composite structures which provides excellent optical and electrical properties, while maintaining an acceptable mechanical, biocomp...

متن کامل

TeraHertz Schottky-Diode Balanced Mixers

We report on the first THz balanced mixer/upconverter using a Schottky diode MMIC chip. Using an optically pumped laser at 1562 GHz as an LO source with a coupled power of about 1 mW, and 1 mW input at an IF frequency of 10 GHz, we obtained a sideband output power of 23 uW (sum of two sidebands). As a mixer, at an LO of 1621 GHz, we obtain a conversion loss of 12.4 dB DSB and a noise temperatur...

متن کامل

Layer dependence and gas molecule absorption property in MoS2 Schottky diode with asymmetric metal contacts

Surface potential measurement on atomically thin MoS2 flakes revealed the thickness dependence in Schottky barriers formed between high work function metal electrodes and MoS2 thin flakes. Schottky diode devices using mono- and multi-layer MoS2 channels were demonstrated by employing Ti and Pt contacts to form ohmic and Schottky junctions respectively. Characterization results indicated n-type ...

متن کامل

Copper phthalocyanine based Schottky diode solar cells

Copper phthalocyanine (CuPc)/Aluminum (Al) Schottky diode solar cells were studied. The thickness of the CuPc layer was varied from 15 nm to 140 nm. Short circuit current densities (Jsc) increased with thickness from 0.042 mA/cm at 15 nm to 0.124 mA/cm at 120 nm reaching saturation at that level. Open circuit voltages (Voc) increased from 220 mV at 15 nm to 907 mV at 140 nm. Analysis of the cur...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Applied Physics Letters

سال: 2022

ISSN: ['1520-8842', '0003-6951', '1077-3118']

DOI: https://doi.org/10.1063/5.0097408